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FQI4N90 900V N-Channel MOSFET

FQI4N90 Description

FQI4N90 * N-Channel QFET® MOSFET FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQI4N90 Features

* 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max. ) @ VGS = 10 V, ID = 2.1 A
* Low Gate Charge (Typ. 24 nC)
* Low Crss (Typ. 9.5 pF)
* 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

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Datasheet Details

Part number
FQI4N90
Manufacturer
Fairchild Semiconductor
File Size
803.63 KB
Datasheet
FQI4N90_FairchildSemiconductor.pdf
Description
900V N-Channel MOSFET

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI4N90-like datasheet