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FQU1N50B 500V N-Channel MOSFET

FQU1N50B Description

FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU1N50B Features

* 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

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500V N-Channel MOSFET Fairchild Semiconductor
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