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IRF610A - Advanced Power MOSFET

IRF610A Description

Advanced Power MOSFET .

IRF610A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source

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Datasheet Details

Part number
IRF610A
Manufacturer
Fairchild Semiconductor
File Size
279.10 KB
Datasheet
IRF610A_FairchildSemiconductor.pdf
Description
Advanced Power MOSFET

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF610A-like datasheet