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IRFD220 - N-Channel Power MOSFET

IRFD220 Description

IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transist.

IRFD220 Features

* 0.8A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

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Datasheet Details

Part number
IRFD220
Manufacturer
Fairchild Semiconductor
File Size
91.00 KB
Datasheet
IRFD220_FairchildSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFD220-like datasheet

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