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IRFM224B 250V N-Channel MOSFET

IRFM224B Description

IRFM224B November 2001 IRFM224B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFM224B Features

* 0.92A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching Improved dv/dt capability D D ! " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

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250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFM224B-like datasheet