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IRFW710B 400V N-Channel MOSFET

IRFW710B Description

IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW710B Features

* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
* Low gate charge ( typical 7.7 nC)
* Low Crss ( typical 6.0 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFW710B-like datasheet