Datasheet4U Logo Datasheet4U.com

IRFW720B 400V N-Channel MOSFET

IRFW720B Description

IRFW720B / IRFI720B November 2001 IRFW720B / IRFI720B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW720B Features

* 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V
* Low gate charge ( typical 14 nC)
* Low Crss ( typical 11 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings

📥 Download Datasheet

Preview of IRFW720B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFW720A - Power MOSFET (Samsung)
  • IRFW730A - Power MOSFET (Samsung)
  • IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFW610A - Power MOSFET (Samsung)
  • IRFW630A - Power MOSFET (Samsung)
  • IRFW630B - N-Channel MOSFET (ON Semiconductor)
  • IRFW830A - Power MOSFET (Samsung)
  • IRFWZ24A - Power MOSFET (Samsung)

📌 All Tags

Fairchild Semiconductor IRFW720B-like datasheet