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IRFW730B 400V N-Channel MOSFET

IRFW730B Description

IRFW730B / IRFI730B November 2001 IRFW730B / IRFI730B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
* Low gate charge ( typical 25 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings T

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFW730B-like datasheet