Datasheet4U Logo Datasheet4U.com

SSH6N70A Advanced Power MOSFET

SSH6N70A Description

Advanced Power MOSFET w w w .D t a .

SSH6N70A Features

* h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) 1 2 3

📥 Download Datasheet

Preview of SSH6N70A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSH6N70 - N-Channel Power MOSFET (Samsung Electronics)
  • SSH6N55 - (SSH6N55 / SSH6N60) N-Channel Power MOSFETs (Samsung Electronics)
  • SSH6N60 - (SSH6N55 / SSH6N60) N-Channel Power MOSFETs (Samsung Electronics)
  • SSH6N80 - N-Channel Power MOSFET (Samsung Electronics)
  • SSH6N80AS - Advanced Power MOSFET (Samsung Electronics)
  • SSH6N90A - Advanced Power MOSFET (Samsung Electronics)
  • SSH10N60A - advanced power MOSFET (Fairchild)
  • SSH10N60B - 600V N-Channel MOSFET (Fairchild)

📌 All Tags

Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSH6N70A-like datasheet