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SSI1N60A Advanced Power MOSFET

SSI1N60A Description

Advanced Power MOSFET .

SSI1N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) 1 I2-PAK

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