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LP6836P100

Packaged 0.25W Power PHEMT

LP6836P100 Features

* LP6836P100 Packaged 0.25W Power PHEMT

* GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN DESCRIPTION AND APPLICATIONS The LP

LP6836P100 General Description

AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes.

LP6836P100 Datasheet (23.10 KB)

Preview of LP6836P100 PDF

Datasheet Details

Part number:

LP6836P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

23.10 KB

Description:

Packaged 0.25w power phemt.

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TAGS

LP6836P100 Packaged 0.25W Power PHEMT Filtronic Compound Semiconductors

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