LP6836P100 Datasheet - Filtronic Compound Semiconductors

LP6836P100_FiltronicCompoundSemiconductors.pdf

LP6836P100 Datasheet Preview — Preview of LP6836P100 PDF

Datasheet Details

Part number:

LP6836P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

23.10 KB

Description:

Packaged 0.25w power phemt.

LP6836P100, Packaged 0.25W Power PHEMT

AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate.

The recessed “mushroom” gate structure minimizes

📁 Related Datasheet

LP6-EWN1-03-N3 LP6-EWN1-03-N3-MT LP6002 LP60100100F LP6062NL LP61L1008

📌 All Tags

LP6836P100 Packaged 0.25W Power PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LP6836P100-like datasheet