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LP6836P70 - PACKAGED MEDIUM POWER PHEMT

LP6836P70 Description

PACKAGED MEDIUM POWER PHEMT * .
AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications re.

LP6836P70 Features

* 23 dBm Output Power at 1-dB Compression at 15 GHz
* 11.5 dB Power Gain at 15 GHz
* 50% Power-Added Efficiency LP6836P70

LP6836P70 Applications

* The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical appli

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PACKAGED MEDIUM POWER PHEMT Filtronic Compound Semiconductors
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