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LP6836 - MEDIUM POWER PHEMT

LP6836 Description

MEDIUM POWER PHEMT * .
AND APPLICATIONS DIE SIZE: 14.

LP6836 Features

* 25 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD

LP6836 Applications

* DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m

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MEDIUM POWER PHEMT Filtronic Compound Semiconductors
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