2SB688
First Silicon
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Pnp epitaxial silicon transistor.
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DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·Minimum Lot-to-L.
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DESCRIPTION ·With TO-3 package ·High power d.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.9MAX.
Unit in mm
03.2±Q .2
FEATURES • Complementary to 2.
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DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718
APP.
2SB688 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB688
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement .
2SB688 - PNP Transistor
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SB688 TRANSISTOR (PNP)
FEATURES z High Breakdown Voltage z .