MRF8HP21130HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF8HP21130HR3, RF Power Field Effect Transistors

10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000 *2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Numb

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.

0, 4/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc,

MRF8HP21130HR3 Features

* Advanced High Performance In

* Package Doherty

* Production Tested in a Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters