Part number:
MRF8HP21130HR3
Manufacturer:
Freescale Semiconductor
File Size:
580.64 KB
Description:
Rf power field effect transistors.
MRF8HP21130HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF8HP21130HR3
Manufacturer:
Freescale Semiconductor
File Size:
580.64 KB
Description:
Rf power field effect transistors.
MRF8HP21130HR3, RF Power Field Effect Transistors
10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000 *2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Numb
Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.
0, 4/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc,
MRF8HP21130HR3 Features
* Advanced High Performance In
* Package Doherty
* Production Tested in a Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
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