Description
Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.0, 4/2011 RF Power Field Effect Transistors N *Channel Enhancement.
10 μF Chip Capacitors 15 pF Chip Capacitors 1.
Features
* Advanced High Performance In
* Package Doherty
* Production Tested in a Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
Applications
* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg. , IQ Magnitude Clippin
