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MRF8HP21130HSR3 Datasheet - Freescale Semiconductor

MRF8HP21130HSR3 RF Power Field Effect Transistors

10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000 *2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Numb.
Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, .

MRF8HP21130HSR3 Features

* Advanced High Performance In

* Package Doherty

* Production Tested in a Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters

MRF8HP21130HSR3 Datasheet (580.64 KB)

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Datasheet Details

Part number:

MRF8HP21130HSR3

Manufacturer:

Freescale Semiconductor

File Size:

580.64 KB

Description:

Rf power field effect transistors.

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MRF8HP21130HSR3 Power Field Effect Transistors Freescale Semiconductor

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