MRF8HP21130HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF8HP21130HSR3, MRF8HP21130HR3
Manufacturer:
Freescale Semiconductor
File Size:
580.64 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF8HP21130HSR3, MRF8HP21130HR3.
Please refer to the document for exact specifications by model.
MRF8HP21130HSR3, MRF8HP21130HR3, RF Power Field Effect Transistors
10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000 *2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Numb
Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.
0, 4/2011 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc,
MRF8HP21130HSR3 Features
* Advanced High Performance In
* Package Doherty
* Production Tested in a Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters
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