MRF8HP21130HSR3, MRF8HP21130HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF8HP21130HSR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF8HP21130HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF8HP21130HSR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF8HP21130HSR3, MRF8HP21130HR3
Manufacturer	Freescale Semiconductor
File Size	580.64 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8HP21130HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF8HP21130HSR3, MRF8HP21130HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF8HP21130HSR3 datasheet.

MRF8HP21130HSR3 Product details

Description

10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000--2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Number GRM55DR61H106KA88L ATC600F150JT250XT ATC600F1R2BT250XT ATC600F0R5BT250XT ATC600F0R7BT250XT ATC600F1R0BT250XT EMVY500ADA221MJA0G CRCW1206100RFKEA CRCW120610R0JNEA X3C21P1--03S R04350 Manufacturer Murata AT

Features

Advanced High Performance In--Package Doherty.
Production Tested in a Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction.

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Published: Jul 7, 2011 |