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MW4IC001MR4 RF LDMOS Wideband Integrated Power Amplifiers

MW4IC001MR4 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC001MR4 Rev.3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wi.

MW4IC001MR4 Features

* (%), Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 1930 Gps IMD VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two
* Tone Measurement, 100 kHz Tone Spacing IRL ηD
* 11
* 14
* 17
* 20
* 23

MW4IC001MR4 Applications

* GSM EDGE, TDMA, CDMA and W - CDMA.
* Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power
* 900 mW PEP Power Gain
* 13 dB Efficiency
* 38%
* High Gain, High Efficiency and High Linearity
* Designed for Maximum Gain and Insertion Phas

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Datasheet Details

Part number
MW4IC001MR4
Manufacturer
Freescale Semiconductor
File Size
629.78 KB
Datasheet
MW4IC001MR4_FreescaleSemiconductor.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers

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LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor
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