MB82B79 - 72K-BIT HIGH-SPEED BiCMOS SRAM
Symbol Pin Name A.
to A,.
Address input.
110, to 110.
Data inpUt/output.
CS, Chip Select 1.
CS.
Chip Select 2.
OE Output Enable.
M882879-15 M882879-20 Symbol WE Vee GND Pin Name Write Enable.
Power Supply (+5V ±1 0%) Ground.
TRUTH TABLE CS, CS, WE OE Mode H X X X Standby l l X
May 1990 Edition 1.0 DATA SHEET cO FUJITSU M882879-151-20 72K-BIT HIGH-SPEED BiGMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fuj~su MB82B79 is a8, 192words x 9 b~ static random access memory fabricated w~h a CMOS silicon gate process.
For lower power dissipation and higher speed, the peripheral circu~s use BiCMOS technology.
To obtain a smaller chip size, cells use NMOS transistors and resistors.
The MB82B79 has 300 mil plastic DIP and SOJ packages, and a 450
