MB82B81 Datasheet - Fujitsu

MB82B81 256K-BIT HIGH-SPEED BiCMOS SRAM

Symbol Ao to A17 0,. DOUT as Pin Name Address input. Dete input. DetaOulput. Chip Select. Symbol WE Vee GND MB82B81-15 MB82B81-20 Pin Name Write Enable. Po_ Supply (+5V ±10%). Ground. TRUTH TABLE Ci WE Mode H X Not Selected L L Write L H Read Legend: H = High level, L = Low lewl, X.

September 1990 Edition 1.0 DATA SHEET 00 FUJITSU M882881-151-20 256K-BIT HIGH-SPEED BiGMOS SRAM 256K Words x 1 Bit BICMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262.144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in the peripheral circuits to provide lower power dissipation and higher speed. The MB82B81 is housed in a300 mil plastic DIPorsmall outlineJ-lead (SOJ) package. The memor.

MB82B81-Fujitsu.pdf