MB82B84 - CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM
Symbol Pin name A" to A,s Address input 1I0,to 110.
Data input/output CS Chip Select 1 MB82B84-15 MB82B84-20 Symbol Pin name WE Vee GND Wrtte Enable Power Supply (+5V ±1 0%) Ground TRUTH TABLE CS WE Mode H X Standby L L Write L H Read Legend: H=High level, L=Low level, X=Don
July 1990 Edition 1.0 DATA SHEET cP FUJITSU MB82B84-151-20 GMOS 256K-BIT HIGH-SPEED BiGMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 words x 4 bits static random access memory fabricated with a CMOS silicon gate process.
For lower power dissipation and higher speed, peripheral circuits use BiCMOS technology.
To obtain a smaller chip size, cells use NMOS transistors and resistors.
The MB82B84 is housed in