MB82B85 - 256K-BIT HIGH-SPEED BiCMOS SRAM
Symbol Pin name Ao to A..
va, to va.
Address input Data inpulloutput "OS" Chip Select "OE" Output Enable MB82B85-15 MB82B85-20 Symbol WE Va; GND Plnname Wr~eEnable Power Supply (+5V ±100/0) Ground TRUTH TABLE « WE « H X X l l X l H H l H l Mode Standby Wr~e Output Desable Re
September 1990 Edition 1.0 DATA SHEET cO FUJITSU MB82B85-151-20 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BICMOS High-Speed Static Random Access Memory With Automatic Power Down The Fujitsu MB82B85 is a static random access memory organized as 65,536 words by 4 bits and fabricated with a CMOS silicon gate process.
BiCMOStechnology is used in the peripheral circuits to provide lower power dissipation and higher speed.
To obtain a smaller chip size, the cells use NMOS transistors and
