IRF833, IRF832 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRF833, IRF832, FIELD EFFECT POWER TRANSISTOR

~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0.

This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with goo

IRF833 Features

* Polysilicon gate -Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement