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IRF833

FIELD EFFECT POWER TRANSISTOR

IRF833 Features

* Polysilicon gate -Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF833 Datasheet (201.68 KB)

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Datasheet Details

Part number:

IRF833

Manufacturer:

GE

File Size:

201.68 KB

Description:

Field effect power transistor.
~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0. This series of N~Channel Enhancement-mode Power MOSFETs.

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IRF833 FIELD EFFECT POWER TRANSISTOR GE

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