IRF832 Datasheet - GE

IRF832 FIELD EFFECT POWER TRANSISTOR

~D~~~U FIELD EFFECT POWER TRANSISTOR IRF832,833 4.0 AMPERES 500, 450 VOLTS ROS(ON) = 2.0 .0. This series of N~Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with goo.

IRF832 Features

* Polysilicon gate -Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRF832 Datasheet (201.68 KB)

IRF832 Datasheet Preview — Preview of IRF832 PDF

Datasheet Details

Part number:

IRF832

Manufacturer:

File Size:

201.68 KB

Description:

Field effect power transistor.

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IRF832 FIELD EFFECT POWER TRANSISTOR GE

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