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GL9575 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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  • Package Dimensions SOT-223 REF. A C D E I H www. DataSheet4U. com Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -60 25 -4.0 -3.2 -20 3 0.

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Datasheet Details

Part number GL9575
Manufacturer GTM
File Size 253.79 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GL9575 Datasheet
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Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9575 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 90m -4A The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions SOT-223 REF. A C D E I H www.DataSheet4U.com Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.
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