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GS-065-011-6-LR - 700V E-mode GaN transistor

GS-065-011-6-LR Description

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The GS-065-011-6-LR is an enhancement mode GaN-on-Silicon power transistor.

GS-065-011-6-LR Features

* 700 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 125 mΩ
* IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A
* Ultra-low FOM
* Simple gate drive requirements (0 V to 6 V)

GS-065-011-6-LR Applications

* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance Motor Drives
* Wireless Power Transfer

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Datasheet Details

Part number
GS-065-011-6-LR
Manufacturer
GaN Systems
File Size
860.59 KB
Datasheet
GS-065-011-6-LR-GaNSystems.pdf
Description
700V E-mode GaN transistor

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700V E-mode GaN transistor GaN Systems
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