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GS66516T - Top cooled 650V enhancement mode GaN transistor

GaN Systems

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Datasheet Details

Part number	GS66516T
Manufacturer	GaN Systems
File Size	0.99 MB
Description	Top cooled 650V enhancement mode GaN transistor
Datasheet	GS66516T-GaNSystems.pdf

GS66516T Product details

Description

The GS66516T is an enhancement mode GaN-onsilicon power transistor.

Features

650 V enhancement mode power transistor.
Top-side cooled configuration.
RDS(on) = 25 mΩ.
IDS(max) = 60 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Apr 14, 2017 |