GS-GG1286463FFWJ Datasheet, Lcd, Genda

PDF File Details

Part number:

GS-GG1286463FFWJ

Manufacturer:

Genda

File Size:

806.18kb

Download:

📄 Datasheet

Description:

Lcd. 8. ELECTRICAL CHARACTERISTICS 9. ABSOLUTE MAXIMUM RATINGS 10. ELECTRO-OPTICAL CHARAC TERISTICS 11. RELIABILITY OF LCD MODULE 12. AC C

TAGS

GS-GG1286463FFWJ

Genda

📁 Related Datasheet

GS-GG1286463FFWR - LCD (Genda)
Free Datasheet http://../ LCD Module Technical Specification Part No. Customer : GS-GG1286463FFWJ/R : Customer Approved Approved .

GS-GB1286420YFYJ - LCD Module (Genda)
GENDA TECHNOLOGY LTD Part No. :GS-GB1286420YFYJ/R Customer :_______________ Drawing No. :_______________ Approved :_______________ Date :____________.

GS-GB1286433YFYJ-C - LCD (Genda)
GENDA TECHNOLOGY (SHEN ZHEN) LTD Part No. Customer Drawing No. Approved Date : GS-GB1286433YFYJ-C/R :_____________ :_____________ :_____________ :__.

GS-GB1286433YFYJ-R - LCD (Genda)
GENDA TECHNOLOGY (SHEN ZHEN) LTD Part No. Customer Drawing No. Approved Date : GS-GB1286433YFYJ-C/R :_____________ :_____________ :_____________ :__.

GS-065-004-1-L - 650V E-mode GaN transistor (GaN Systems)
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.

GS-065-004-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.

GS-065-008-1-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.

GS-065-008-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.

GS-065-011-1-L - 650V E-mode GaN transistor (GaN Systems)
GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.

GS-065-011-2-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .