GS-GG1286463FFWR
Genda
806.18kb
Lcd. 8. ELECTRICAL CHARACTERISTICS 9. ABSOLUTE MAXIMUM RATINGS 10. ELECTRO-OPTICAL CHARAC TERISTICS 11. RELIABILITY OF LCD MODULE 12. AC C
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📁 Related Datasheet
GS-GG1286463FFWJ - LCD
(Genda)
Free Datasheet http://../
LCD Module Technical Specification
Part No. Customer : GS-GG1286463FFWJ/R :
Customer Approved
Approved
.
GS-GB1286420YFYJ - LCD Module
(Genda)
GENDA TECHNOLOGY LTD
Part No. :GS-GB1286420YFYJ/R Customer :_______________ Drawing No. :_______________ Approved :_______________ Date :____________.
GS-GB1286433YFYJ-C - LCD
(Genda)
GENDA TECHNOLOGY (SHEN ZHEN) LTD
Part No. Customer Drawing No. Approved Date
: GS-GB1286433YFYJ-C/R :_____________ :_____________ :_____________ :__.
GS-GB1286433YFYJ-R - LCD
(Genda)
GENDA TECHNOLOGY (SHEN ZHEN) LTD
Part No. Customer Drawing No. Approved Date
: GS-GB1286433YFYJ-C/R :_____________ :_____________ :_____________ :__.
GS-065-004-1-L - 650V E-mode GaN transistor
(GaN Systems)
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GS-065-004-6-L - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.
GS-065-008-1-L - 650V E-mode GaN transistor
(GaN Systems)
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.
GS-065-008-6-L - 700V E-mode GaN transistor
(GaN Systems)
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.
GS-065-011-1-L - 650V E-mode GaN transistor
(GaN Systems)
GS-065-011-1-L 650 V E-mode GaN transistor
Datasheet
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.
GS-065-011-2-L - 650V E-mode GaN transistor
(GaN Systems)
Features
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .