Part number:
HM1N70PR
Manufacturer:
H&M Semiconductor
File Size:
854.49 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
HM1N70PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Max 700 1.0 3 10.5 performance and enhance the avalanche energy.
The transistor can be used in various power switc
HM1N70PR Features
* z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet
Datasheet Details
HM1N70PR
H&M Semiconductor
854.49 KB
Silicon n-channel power mosfet.
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