Datasheet Details
- Part number
- HM2306
- Manufacturer
- H&M Semiconductor
- File Size
- 279.47 KB
- Datasheet
- HM2306-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM2306 Description
HM2306 N-Channel Enhancement Mode Power MOSFET .
The HM2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
HM2306 Features
* VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired
HM2306 Applications
* Load switch
* Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM2306
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain
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