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HM2324E Datasheet - H&M Semiconductor

HM2324E N-Channel Enhancement Mode Power MOSFET

  Marking and pin Assignment +0 Marking and pin Assignment SOT-23 -3L top view Package Marking and Ordering Information Device Marking +0 Device  +0 Device Package 627/ Reel Size - Tape width -  1  Shenzhhettnp：H&//MwwSwem.himcosnem.
+0 100VDS／±20VGS／2.7A(ID) N-Channel Enhancement Mode MOSFET  Features VDSS=1 00V／VGSS=±20V／ID=2.7A RDS(ON)=180mΩ(Max.)@VGS=10V RDS(ON)=240mΩ(Max.)@VGS=4.5V ESDprotect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance  Applications z Synchronous Rectification z Power Management in Inverter System Switching Time Test Circuit and Waveforms  PinDe.

HM2324E Datasheet (697.79 KB)

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Datasheet Details

Part number:

HM2324E

Manufacturer:

H&M Semiconductor

File Size:

697.79 KB

Description:

N-channel enhancement mode power mosfet.

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HM2324E N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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