Datasheet Details
- Part number
- HM2328
- Manufacturer
- H&M Semiconductor
- File Size
- 319.61 KB
- Datasheet
- HM2328-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM2328 Description
100V N Channel Enhancement Mode MOSFET 100 V N MOS HM2328 VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω Feat.
HM2328 Features
* Advanced trench process technology High Density Cell Design For Ultra Low OnResistance
Improved ShootThrough FOM Package Dimensions
Package Dimensions
Marking D
SOT-23(PACKAGE)
2328
G
S
REF. A B C D E
F
Millimeter
Min. Max. 2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.5
HM2328 Applications
* , should be limited by total power dissipation. -2-
HM2328
Typical Characteristics
5.0
4.0
ID Drain Current (A)
3.0
VGS=10V VGS=7V
2.0
VGS=5V VGS=4.5V
1.0
VGS=3V
0.0
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
2
RDSON (mΩ)
265
ID=1A
260
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