* Advanced trench process technology High Density Cell Design For Ultra Low OnResistance Improved ShootThrough FOM Package Dimensions Package Dimensions Marking D SOT-23(PACKAGE) 2328 G S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.5
HM2328
H&M Semiconductor
319.61 KB
N-channel enhancement mode power mosfet.
100V N Channel Enhancement Mode MOSFET 100 V N MOS HM2328 VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω Feat.
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