HM2N70R silicon N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

H015 General .
VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W w.

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Datasheet Specifications

Part number: HM2N70R
Manufacturer: H&M Semiconductor
File Size: 522.75 KB
Datasheet: HM2N70R-HMSemiconductor.pdf
Description: silicon N-channel Enhanced VDMOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Volt

HM2N70R Distributors

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HM2N70R silicon N-channel Enhanced VDMOSFET H&M Semiconductor

H&M Semiconductor HM2N70R-like datasheet