HM2N70R - silicon N-channel Enhanced VDMOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2N70R
Manufacturer	H&M Semiconductor
File Size	522.75 KB
Description	silicon N-channel Enhanced VDMOSFET
Datasheet	HM2N70R-HMSemiconductor.pdf

HM2N70R Product details

Description

VDSS 700 V HM2N70R, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-223, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 15, 2025 |