HMS29N65 Datasheet - H&M Semiconductor

HMS29N65 - N-Channel Super Junction Power MOSFET

HMS29N65 Features

* Optimized body diode reverse recovery performance

* Low on-resistance and low conduction losses

* Small package

* Ultra Low Gate Charge cause lower driving requirements

* 100% Avalanche Tested

* ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A Application

* Power fact

Datasheet Details

HMS29N65

H&M Semiconductor

743.14 KB

N-channel super junction power mosfet.

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