HMS29N65F Features
* Optimized body diode reverse recovery performance
* Low on-resistance and low conduction losses
* Small package
* Ultra Low Gate Charge cause lower driving requirements
* 100% Avalanche Tested
* ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A Application
* Power fact
Datasheet Details
HMS29N65F, HMS29N65
H&M Semiconductor
743.14 KB
N-channel super junction power mosfet.
This datasheet PDF includes multiple part numbers: HMS29N65F, HMS29N65.
Please refer to the document for exact specifications by model.
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