HMS32N65F Datasheet - H&M Semiconductor

HMS32N65F - 650V N-Channel Super Junction MOSFET

HMS32N65F Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 32 99 75 Unit V A mΩ nC Application

Datasheet Details

HMS32N65F

H&M Semiconductor

574.12 KB

650v n-channel super junction mosfet.

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