HMS60N06D N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HMS60N06D N-Channel Super Trench Power MOSFET .
The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS60N06D
Manufacturer: H&M Semiconductor
File Size: 464.20 KB
Datasheet: HMS60N06D-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =60V,ID =60A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram Marking and pin a

HMS60N06D Distributors

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HMS60N06D N-Channel Super Trench Power MOSFET H&M Semiconductor

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