Part number:
HMS60N06Q
Manufacturer:
H&M Semiconductor
File Size:
612.79 KB
Description:
N-channel super trench power mosfet.
Datasheet Details
The HMS14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS60N06Q Features
* VDS =60V,ID =0A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View
Datasheet Details
HMS60N06Q
H&M Semiconductor
612.79 KB
N-channel super trench power mosfet.
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