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HMS65N03Q Datasheet - H&M Semiconductor

HMS65N03Q N-Channel Super Trench Power MOSFET

The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

HMS65N03Q Features

* VDS =30V,ID =65A RDS(ON)=1.65mΩ (typical) @ VGS=10V RDS(ON)=2.45mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top Vie

HMS65N03Q-HMSemiconductor.pdf

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Datasheet Details

Part number:

HMS65N03Q

Manufacturer:

H&M Semiconductor

File Size:

691.82 KB

Description:

N-channel super trench power mosfet.

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HMS65N03Q HMS65N03Q N-Channel Super Trench Power MOSFET H&M Semiconductor

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