Part number:
HMS65N03Q
Manufacturer:
H&M Semiconductor
File Size:
691.82 KB
Description:
N-channel super trench power mosfet.
Datasheet Details
The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS65N03Q Features
* VDS =30V,ID =65A RDS(ON)=1.65mΩ (typical) @ VGS=10V RDS(ON)=2.45mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top Vie
Datasheet Details
HMS65N03Q
H&M Semiconductor
691.82 KB
N-channel super trench power mosfet.
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