Datasheet Details
- Part number
- HMS6N10PR
- Manufacturer
- H&M Semiconductor
- File Size
- 686.84 KB
- Datasheet
- HMS6N10PR-HMSemiconductor.pdf
- Description
- N-Channel Super Trench Power MOSFET
HMS6N10PR Description
N-Channel Super Trench Power MOSFET .
The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
HMS6N10PR Features
* VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
📁 Related Datasheet
📌 All Tags
HMS6N10PR Stock/Price