Part number:
HMS6N10PR
Manufacturer:
H&M Semiconductor
File Size:
686.84 KB
Description:
N-channel super trench power mosfet.
Datasheet Details
The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS6N10PR Features
* VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Application
* DC/DC Converter
* Ideal for high
Datasheet Details
HMS6N10PR
H&M Semiconductor
686.84 KB
N-channel super trench power mosfet.
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