HMS6N10PR Datasheet - H&M Semiconductor

HMS6N10PR N-Channel Super Trench Power MOSFET

The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

HMS6N10PR Features

* VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high

HMS6N10PR-HMSemiconductor.pdf

HMS6N10PR Datasheet Preview — Preview of HMS6N10PR PDF

Datasheet Details

Part number:

HMS6N10PR

Manufacturer:

H&M Semiconductor

File Size:

686.84 KB

Description:

N-channel super trench power mosfet.

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HMS6N10PR HMS6N10PR N-Channel Super Trench Power MOSFET H&M Semiconductor

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