HMS6N10PR N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

N-Channel Super Trench Power MOSFET .
The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

📥 Download Datasheet

HMS6N10PR Datasheet Preview — Preview of HMS6N10PR PDF

Datasheet Specifications

Part number: HMS6N10PR
Manufacturer: H&M Semiconductor
File Size: 686.84 KB
Datasheet: HMS6N10PR-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating

HMS6N10PR Distributors

📁 Related Datasheet

HMS-23KMK381P3V HMS0864B HMS0864B-100 HMS0864B-1R0 HMS0864B-2R2 HMS0864B-3R3

📌 All Tags

HMS6N10PR N-Channel Super Trench Power MOSFET H&M Semiconductor

H&M Semiconductor HMS6N10PR-like datasheet