HMS60N10DA Datasheet - H&M Semiconductor

HMS60N10DA - N-Channel Super Trench Power MOSFET

The HMS60N10DA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS60N10DA Features

* VDS =100V,ID =60A RDS(ON)

Datasheet Details

HMS60N10DA

H&M Semiconductor

448.11 KB

N-channel super trench power mosfet.

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