HM2300DR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2300DR Description

HM2300DR N-Channel Enhancement Mode Power MOSFET .
The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2300DR Features

* VDS = 20V,ID = 8.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

HM2300DR Datasheet Preview — Preview of HM2300DR PDF

Datasheet Details

Part number: HM2300DR
Manufacturer: H&M Semiconductor
File Size: 687.94 KB
Datasheet: HM2300DR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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