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HM4490 - N-Channel Enhancement Mode Power MOSFET

HM4490 Description

HM4490 N-Channel Enhancement Mode Power MOSFET .
The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4490 Features

* VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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Datasheet Details

Part number
HM4490
Manufacturer
H&M Semiconductor
File Size
506.41 KB
Datasheet
HM4490-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4490-like datasheet