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HMS29N65 - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS29N65
Manufacturer: H&M Semiconductor
File Size: 743.14 KB
Datasheet: HMS29N65-HMSemiconductor.pdf
Description: N-Channel Super Junction Power MOSFET

HMS29N65 Product details

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge..

Features

Optimized body diode reverse recovery performance.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A Application.
Power factor correction（PFC）.
Switched mode power supplies(SMPS).
Uninterruptible Power Supply（UPS）.
LLC Half-bridge Schematic diagram.
Intrinsic fast-recovery body diode Package Marking A.

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N-Channel Super Junction Power MOSFET H&M Semiconductor

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