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HMS35N06D - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS35N06D
Manufacturer: H&M Semiconductor
File Size: 474.27 KB
Datasheet: HMS35N06D-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

HMS35N06D Product details

Description

The HMS35N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance..

Features

VDS =60V,ID =35A RDS(ON)=9.1mΩ (typical) @ VGS=10V RDS(ON)=12mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram Marking and pin assignment Application.
DC/DC Converter.
Ideal for high-frequency switching and synchronous rectification 100% UIS.

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N-Channel Super Trench Power MOSFET H&M Semiconductor

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