HMS60N06Q - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS60N06Q
Manufacturer: H&M Semiconductor
File Size: 612.79 KB
Datasheet: HMS60N06Q-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

HMS60N06Q Product details

Description

The HMS14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.. DC/DC Converter. Ideal for high-frequency switching and synchronous rectification General.

Features

VDS =60V,ID =0A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS.

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N-Channel Super Trench Power MOSFET H&M Semiconductor

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