HMS65N03Q - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS65N03Q
Manufacturer: H&M Semiconductor
File Size: 691.82 KB
Datasheet: HMS65N03Q-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

HMS65N03Q Product details

Description

The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.. DC/DC Converter. Ideal for high-frequency switching and synchronous rectification General.

Features

VDS =30V,ID =65A RDS(ON)=1.65mΩ (typical) @ VGS=10V RDS(ON)=2.45mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS.

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N-Channel Super Trench Power MOSFET H&M Semiconductor

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