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2SC2879 HG RF POWER TRANSISTOR

2SC2879 Description

HG Semiconductors 2SC2879HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR .
Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use) FEATURES. Specified 12.

2SC2879 Features

* Specified 12.5V, 28MHz Characteristics
* PO = 100W PEP
* GP = 15.2 Typ. at 100 W/28 MHz
* IMD3 = -24 dBc max. at 100 W(PEP)
* Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α 1 H Lb 3 w2 M C A c p U2 5 D1 U3 w1 M A B 2 Q 1.Collector 2.EM

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Datasheet Details

Part number
2SC2879
Manufacturer
HGSemi
File Size
294.27 KB
Datasheet
2SC2879-HGSemi.pdf
Description
HG RF POWER TRANSISTOR

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POWER TRANSISTOR HGSemi
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