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2SC2879A - Silicon NPN epitaxial planar type Transistor

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Part number 2SC2879A
Manufacturer Toshiba
File Size 208.75 KB
Description Silicon NPN epitaxial planar type Transistor
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2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : ηC = 35% (Min.) Intermodulation Distortion : IMD = −24dB(Max.) (MIL Standard) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 25 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2–13B1A Note: Using continuously under heavy loads (e.g.
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