2SC2879A Silicon NPN epitaxial planar type Transistor

Toshiba

Description

2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit .

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Datasheet Specifications

Part number: 2SC2879A
Manufacturer: Toshiba ↗
File Size: 208.75 KB
Datasheet: 2SC2879A_Toshiba.pdf
Description: Silicon NPN epitaxial planar type Transistor

Applications

* (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 100WPEP : Gp = 13dB : ηC = 35% (Min. ) Intermodulation Distortion : IMD =
* 24dB(Max. ) (MIL Standard) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC C

2SC2879A Distributors

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2SC2879A Silicon NPN epitaxial planar type Transistor Toshiba

Toshiba 2SC2879A-like datasheet