CS11J65FA9 Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

CS11J65FA9 Features

* Fast Switching

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 11 A 34.5 W 0.42 Ω Symbol Parameter VDSS ID IDMa1 VGS EA

CS11J65FA9 General Description

CS11J65F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher ef.

CS11J65FA9 Datasheet (510.49 KB)

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CS11J65FA9

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

510.49 KB

Description:

Silicon n-channel power mosfet.

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CS11J65FA9 Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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CS11J65FA9 Features

CS11J65FA9 General Description

Datasheet Details

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